Semiconductor device and method of fabricating the same
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United States of America Patent
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Feb 3, 2009
Grant Date -
Feb 9, 2006
app pub date -
Jun 10, 2005
filing date -
Aug 4, 2004
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device and methods thereof. The semiconductor device includes a first layer formed on a substrate, the first layer having a higher conductivity. The semiconductor device further includes a second layer formed on the first layer, the second layer including a hole exposing a portion of the first layer, the exposed portion of the first layer having a lower conductivity. The method includes forming a first layer on a substrate, the first layer having a higher conductivity, forming a second layer on the first layer, exposing a portion of the first layer by forming a hole in the second layer, performing a process on at least the exposed portion of the first layer, the process decreasing the conductivity of the exposed portion. The exposed portion including the lower conductivity or higher resistivity may block heat from conducting in the first layer.
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