Interconnection structure of semiconductor device
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United States of America Patent
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-
Feb 10, 2009
Grant Date -
May 3, 2007
app pub date -
Dec 8, 2006
filing date -
Jun 10, 2003
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An interconnection is provided with a dummy interconnection connected to an interconnection body, and the dummy interconnection is provided with a stress concentration portion in which tensile stress higher than that of the interconnection body is generated. In proximity to the stress concentration portion, an insulating film formed by high-density plasma CVD is provided, and the tensile stress is generated in the stress concentration portion by the insulating film. With this structure, the occurrence of a void can be prevented at any position in the interconnection body.
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