Gated diode nonvolatile memory process
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United States of America Patent
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Feb 17, 2009
Grant Date -
Jun 14, 2007
app pub date -
May 31, 2006
filing date -
Dec 9, 2005
priority date (Note) -
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Abstract
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.
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