Plasma processing apparatus
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United States of America Patent
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Feb 17, 2009
Grant Date -
Jul 21, 2005
app pub date -
Mar 16, 2005
filing date -
Dec 11, 1998
priority date (Note) -
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Abstract
A plasma processing apparatus includes a chamber having a support for a substrate, and at least one gas inlet into the chamber. The apparatus is configured to alternately introduce an etch gas and a deposition gas into the chamber through the at least on gas inlet, and to strike a plasma into the etch gas and the deposition gas alternately introduced into the chamber. The apparatus is further equipped with an attenuation device for reducing and/or homogenizing the ion flux from the plasma substantially without affecting the neutral radical number density.
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