Method and device for demultiplexing a crossbar non-volatile memory
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United States of America Patent
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Feb 17, 2009
Grant Date -
Jan 1, 2009
app pub date -
Jun 29, 2007
filing date -
Jun 29, 2007
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Abstract
A method and device demultiplex a crossbar non-volatile memory that includes a first array of row nano-wires and a second array of column nano-wires, which cross the row nano-wires at a plurality of cross-points, hosting plural memory cells. A first electrode and a second electrode respectively cross a modulated doping portion of the row nano-wires and a modulated doping portion of the column nano-wires. A first contact and a second contact respectively the row nano-wires and the column nano-wires. The first electrode and the second electrode are biased respectively with a first and a second adjustable voltage value that progressively switch one by one said memory cells from the OFF state to the ON state, and this state can be memorized.
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