Methods of forming nonvolatile memories with L-shaped floating gates
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United States of America Patent
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Feb 24, 2009
Grant Date -
Feb 21, 2008
app pub date -
Aug 16, 2006
filing date -
Aug 16, 2006
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Abstract
In a nonvolatile memory using floating gates to store charge, individual floating gates are L-shaped. Orientations of L-shaped floating gates may alternate in the bit line direction and may also alternate in the word line direction. L-shaped floating gates are formed by etching conductive portions using etch masks of different patterns to obtain floating gates of different orientations.
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