Integrated circuit package substrate having a thin film capacitor structure
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United States of America Patent
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Mar 17, 2009
Grant Date -
Nov 30, 2006
app pub date -
Jul 26, 2006
filing date -
Dec 23, 2003
priority date (Note) -
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status (Latency Note)
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Abstract
This invention relates to the manufacture of a substrate, such as a package substrate or an interposer substrate, of an integrated circuit package. A base structure is formed from a green material having a plurality of via openings therein. The green material is then sintered so that the green material becomes a sintered ceramic material and the base structure becomes a sintered ceramic base structure having the via openings. A conductive via is formed in each via opening of the sintered ceramic base structure. A capacitor structure is formed on the sintered ceramic base structure. The power and ground planes of the capacitor structure are connected to the vias. As such, a capacitor structure can be formed and connected to the vias without the need to drill vias openings in brittle substrates such as silicon substrates. The sintered ceramic material also has a low coefficient of thermal expansion and can resist high temperature processing conditions when manufacturing the capacitor structure, and is inexpensive to manufacture.
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