Thin film transistor and method for manufacturing the same
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United States of America Patent
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Mar 24, 2009
Grant Date -
Jun 15, 2006
app pub date -
Dec 15, 2005
filing date -
Dec 15, 2004
priority date (Note) -
Expired
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Abstract
A method for manufacturing a thin film transistor includes forming a gate oxide film on a substrate, forming a first nitride layer on the gate oxide film, forming a polysilicon layer on the first nitride layer, forming a second nitride layer on sidewalls of the gate oxide film, first nitride layer, and polysilicon layer, and implanting impurity ions to form a pocket below the second nitride layer.
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