Hydride gas purification for the semiconductor industry
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United States of America Patent
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Mar 31, 2009
Grant Date -
Aug 24, 2006
app pub date -
Jul 21, 2004
filing date -
Jul 21, 2003
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Abstract
A method for hydride gas purification uses materials having at least one lanthanide metal or lanthanide metal oxide. The method reduces contaminants to less than 100 parts per billion (ppb), preferably 10 ppb, more preferably 1 ppb. The material can also include transition metals and transition metal oxides, rare earth elements and other metal oxides. The invention also includes materials for use in the method of the invention.
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