Method for making memory cell device
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United States of America Patent
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Mar 31, 2009
Grant Date -
Apr 24, 2008
app pub date -
Oct 18, 2006
filing date -
Oct 18, 2006
priority date (Note) -
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Abstract
A memory cell device, including a memory material element switchable between electrical property states by the application of energy, includes depositing an electrical conductor layer, depositing dielectric material layers and etching to create a first electrode and voids. A memory material is applied into a void to create a memory material element in contact with the first electrode. A second electrode is created to contact the memory material element.
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