Semiconductor circuit with positive temperature dependence resistor
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United States of America Patent
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Mar 31, 2009
Grant Date -
Sep 21, 2006
app pub date -
Jun 29, 2005
filing date -
Mar 18, 2005
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A band gap reference circuit is configured by connecting an emitter of a transistor, having the base and the collector thereof grounded, to an internal circuit, and by connecting an emitter of another transistor, having the base and the collector thereof grounded, to the internal circuit via a resistor having a positive temperature dependence with respect to the absolute temperature, so as to ensure that a constant output current with a small temperature dependence can be generated, without providing any voltage-current conversion circuit and without generating a constant output voltage, while suppressing expansion in the circuit scale but based on a circuit configuration allowing lowering in the power source voltage.
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