Manufacturing methods for thin film fuse phase change ram
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United States of America Patent
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Apr 7, 2009
Grant Date -
Dec 21, 2006
app pub date -
Jun 17, 2005
filing date -
Jun 17, 2005
priority date (Note) -
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Abstract
A method for manufacturing a memory device comprises forming an electrode layer on a substrate which comprises circuitry made using front-end-of-line procedures. The electrode layer includes a first electrode and a second electrode, and an insulating member between the first and second electrodes for each phase change memory cell to be formed. A bridge of memory material is formed on the top surface of the electrode layer across the insulating member for each memory cell to be formed. An access structure over the electrode layer is made by forming a patterned conductive layer over said bridge, and forming a contact between said first electrode and said patterned conductive layer.
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