Thin film plate phase change RAM circuit and manufacturing method
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United States of America Patent
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Apr 7, 2009
Grant Date -
Sep 27, 2007
app pub date -
May 29, 2007
filing date -
Jun 17, 2005
priority date (Note) -
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Abstract
A memory device comprising a access circuits, an electrode layer over the access circuits, an array of phase change memory bridges over the electrode layer, and a plurality of bit lines over the array of phase change memory bridges. The electrode layer includes electrode pairs. Electrode pairs include a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. A bridge of memory material crosses the insulating member, and defines an inter-electrode path between the first and second electrodes across the insulating member.
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