Method for manufacturing a narrow structure on an integrated circuit
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United States of America Patent
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Apr 7, 2009
Grant Date -
Dec 21, 2006
app pub date -
May 11, 2006
filing date -
Jun 17, 2005
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A method of manufacturing for providing a narrow line, such as a phase change bridge, on a substrate having a top surface, includes first forming a layer of first material on the substrate. Then, a layer of a pattern material is applied on the layer of first material, and a pattern is defined. The pattern includes a ledge having a sidewall extending substantially to the layer of first material. A sidewall etch mask is formed on the ledge, and used to define a line of the first material on the substrate having a width substantially determined by the width of the sidewall etch mask.
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