Nanophotovoltaic devices
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United States of America Patent
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Apr 7, 2009
Grant Date -
Jun 1, 2006
app pub date -
Nov 30, 2004
filing date -
Nov 30, 2004
priority date (Note) -
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Abstract
The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.
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