The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
2006/0108,619 Ferromagnetic IV group based semiconductor, ferromagnetic III-V group based compound semiconductor, or ferromagnetic II-IV group based compound semiconductor, and method for adjusting their ferromagnetic characteristics
2004/0112,278 II-IV group or III-V compound based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
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