Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device

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United States of America Patent

PATENT NO 7521282
APP PUB NO 20080090328A1
SERIAL NO

11984942

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Abstract

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The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
JX NIPPON MINING & METALS CORPORATIONTOKYO442

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arakawa, Atsutoshi Kitaibaraki , JP 26 198
Asahi, Toshiaki Saitama , JP 15 51
Sato, Kenji Takasaki , JP 420 3113
Yamamoto, Tetsuya Kochi , JP 351 5824

Cited Art Landscape

Patent Info (Count) # Cites Year
 
GLOBAL OLED TECHNOLOGY LLC (1)
2006/0240,278 OLED device with improved performance 31 2005
 
Other [Check patent profile for assignment information] (3)
* 4904618 Process for doping crystals of wide band gap semiconductors 21 1988
5767533 High-conductivity semiconductor material having a dopant comprising coulombic pairs of elements 18 1996
7094288 Method for producing a positively doped semiconductor with large forbidden band 5 2003
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
7252852 Mg-Zn oxide tunnel barriers and method of formation 49 2004
 
NIPPON MINING & METALS CO., LTD. (1)
* 2008/0089,831 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 5 2007
 
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (1)
2007/0001,581 Nanostructure based light emitting devices and associated methods 44 2005
 
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. (1)
7203209 System and method for a passively Q-switched, resonantly pumped, erbium-doped crystalline laser 18 2005
 
Takafumi YAO (1)
6407405 p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals 15 2000
 
JAPAN SCIENCE AND TECHNOLOGY AGENCY (2)
2006/0108,619 Ferromagnetic IV group based semiconductor, ferromagnetic III-V group based compound semiconductor, or ferromagnetic II-IV group based compound semiconductor, and method for adjusting their ferromagnetic characteristics 21 2003
2004/0112,278 II-IV group or III-V compound based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics 14 2004
 
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS (1)
2006/0024,928 Methods for controlling dopant concentration and activation in semiconductor structures 17 2005
 
SUMITOMO ELECTRIC INDUSTRIES, LTD. (1)
* 6337536 White color light emitting diode and neutral color light emitting diode 124 1999
 
FLIR DETECTION, INC. (2)
7008559 Manganese doped upconversion luminescence nanoparticles 89 2002
7067072 Nanophase luminescence particulate material 23 2002
 
RICOH COMPANY, LTD. (1)
6993872 Light control window 11 2003
 
JX NIPPON MINING & METALS CORPORATION (5)
* 7358159 Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device 3 2002
* 2008/0090,327 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 6 2007
* 2008/0090,328 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 4 2007
* 2008/0090,386 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 4 2007
* 2008/0090,390 Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 4 2007
 
MASSACHUSETTS INSTITUTE OF TECHNOLOGY (1)
* 2007/0103,068 Light emitting devices including semiconductor nanocrystals 73 2006
 
GUARDIAN GLASS, LLC. (1)
2007/0184,573 Method of making a thermally treated coated article with transparent conductive oxide (TCO) coating for use in a semiconductor device 13 2006
 
QIMONDA AG (1)
* 2006/0240,992 Device having a structural element with magnetic properties, and method 9 2006
 
EASTMAN KODAK COMPANY (1)
2006/0240,277 Tandem OLED device 18 2005
 
LAWRENCE LIVERMORE NATIONAL SECURITY, LLC (1)
* 5541948 Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers 75 1994
 
BASF AKTIENGESELLSCHAFT (1)
* 2008/0163,928 Photovoltaic Cell Containing a Semiconductor Photovoltaically Active Material 3 2006
 
SUPERIMAGING, INC. (1)
2004/0227,694 System and method for a three-dimensional color image display utilizing laser induced fluorescence of nanopartcles and organometallic molecules in a transparent medium 18 2004
* Cited By Examiner

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