Chalcogenide devices and materials having reduced germanium or telluruim content
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United States of America Patent
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Apr 28, 2009
Grant Date -
Feb 15, 2007
app pub date -
Dec 12, 2005
filing date -
Aug 9, 2005
priority date (Note) -
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Abstract
. In one embodiment, the concentration of Ge is between 11% and 22%, the concentration of Sb is between 22% and 65%, and the concentration of Te is between 28% and 55%. In a preferred embodiment, the concentration of Ge is between 15% and 18%, the concentration of Sb is between 32% and 35%, and the concentration of Te is between 48% and 51%.
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