Acoustic devices using an AlGaN piezoelectric region
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United States of America Patent
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May 5, 2009
Grant Date -
Jun 21, 2007
app pub date -
Dec 20, 2005
filing date -
Dec 20, 2005
priority date (Note) -
Expired
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Abstract
Provided is a method of forming an acoustic based device, including forming an AlGaN region having a first surface and a second surface. A first electrode is deposited on the first surface of the AlGaN region, and then a second electrode is deposited on a second surface of the AlGaN-region.In another aspect of the present application, the AlGaN region is formed by an epitaxial layer overgrowth process.
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