Method for manufacturing silicon nanodot film for light emission in nano-size photonic devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 12, 2009
Grant Date -
Sep 6, 2007
app pub date -
Nov 16, 2006
filing date -
Dec 24, 2002
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for manufacturing a silicon nanodot thin film having uniform doping concentration without damage by placing a substrate on a stage within a chamber. The method further including depositing a matrix thin film based on the silicon by PECVD, while doping a light emitting material such as Erbium on the matrix thin film deposited by sputtering process at the same time. The silicon nanodot film obtained by the present invention has an improved light emitting characteristic in long distance communication frequency range of 1.54 μm as well as visible light range.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully