Method of manufacturing a dielectric layer and corresponding semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 12, 2009
Issued Date -
N/A
app pub date -
Feb 28, 2005
filing date -
Feb 28, 2005
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in weight to the dielectric layer, forming a non-conductive oxide or nitride having an enthalpy lower than the enthalpy of the first dielectric material such that a leakage current along grain boundaries of the first dielectric material is reduced.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully