Method and circuit for increasing the memory access speed of an enhanced synchronous memory

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United States of America Patent

PATENT NO 7533231
SERIAL NO

10965602

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Abstract

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A memory and method for operating it provide for increased data access speed. In an implementation, a synchronous memory or SDRAM includes a central memory region with memory blocks arranged in sets on respective opposite sides. A number of primary sense amplifier sets are provided, each set being associated with a respective set of the memory blocks and located adjacent. A row cache is provided in the central memory region, and row decoders decode a row address in response to a “bank activate” command and move data from a decoded row address into a primary sense amplifier set associated with a memory block containing the decoded row address and into the row cache, before application of a “read” command to the SDRAM. Column decoders decode a column address in response to a “read” command and for reading data from the cache in accordance with the decoded column address.

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Patent Owner(s)

  • INTELLECTUAL VENTURES I LLC;RAMTRON INTERNATIONAL CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mobley, Kenneth J 17070 Remington Rd. 29 855
Peters, Michael T 3020 Blodgett Dr. 8 50
Schuette, Michael 5555 Shoup Rd. 12 113

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