Damascene phase change RAM and manufacturing method
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United States of America Patent
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May 19, 2009
Grant Date -
Jun 21, 2007
app pub date -
Feb 21, 2007
filing date -
Jun 17, 2005
priority date (Note) -
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Abstract
A method for manufacturing a memory device uses a damascene process to define memory elements. The device comprises a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode and the top side of the second electrode. A damascene patch crosses the insulating member aligned with the first and second electrodes, and defines an inter-electrode path between the first and second electrodes across the insulating member. An array of such memory cells is provided.
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