Method for manufacturing a semiconductor device

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United States of America Patent

PATENT NO 7534702
SERIAL NO

11157166

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An efficient mass-production method of very small devices that can receive or transmit data in touch, preferably, out of touch is provided by forming an integrated circuit made of a thin film over a large glass substrate and transferring the integrated circuit to another backing to be divided. Especially, the integrated circuit made of a thin film is difficult to use since there is a threat that the integrated circuit is scattered in the handling of the integrated circuit since the integrated circuit is extremely thin. According to the present invention, multiple openings reaching a peel layer are provided, a material body having a pattern shape that does not cover regions (the openings and a device portion) is provided, and then, a gas or liquid containing fluorine halide is introduced to partially remove the peel layer.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTD398 HASE ATSUGI-SHI KANAGAWA-KEN 243-0036

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arao, Tatsuya Kanagawa, JP 131 3032
Dozen, Yoshitaka Kanagawa, JP 58 1072
Goto, Yuugo Kanagawa, JP 127 5305
Horikoshi, Nozomi Kanagawa, JP 8 149
Maruyama, Junya Kanagawa, JP 220 11255
Sugiyama, Eiji Kanagawa, JP 70 1417
Tamura, Tomoko Kanagawa, JP 23 602
Yamada, Daiki Kanagawa, JP 51 857

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