Semiconductor device and method of manufacturing the same
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United States of America Patent
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May 19, 2009
Grant Date -
Jan 19, 2006
app pub date -
Sep 23, 2005
filing date -
May 29, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Embodiments of the present invention include semiconductor devices that can be made with relatively low resistance, and methods of forming the semiconductor devices. A resistance reducing layer is formed between a polysilicon layer and a metal layer. As a result, an interface resistance between the polysilicon layer and the metal layer is greatly reduced and a distribution of the interface resistance is very uniform. As a result, a conductive structure including the resistance reducing layer has a greatly reduced sheet resistance to improve electrical characteristics of a semiconductor device having the conductive structure.
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