Semiconductor device and method of manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7534709
APP PUB NO 20060014355A1
SERIAL NO

11233580

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Abstract

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Embodiments of the present invention include semiconductor devices that can be made with relatively low resistance, and methods of forming the semiconductor devices. A resistance reducing layer is formed between a polysilicon layer and a metal layer. As a result, an interface resistance between the polysilicon layer and the metal layer is greatly reduced and a distribution of the interface resistance is very uniform. As a result, a conductive structure including the resistance reducing layer has a greatly reduced sheet resistance to improve electrical characteristics of a semiconductor device having the conductive structure.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SAMSUNG ELECTRONICS CO., LTD.SUWON-SI GYEONGGI-DO59944

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Gil-Heyun Gyeonggi-do, KR 213 2965
Lee, Byung-Hak Suwon-si, KR 33 166
Lee, Chang-Won Gyeonggi-do, KR 75 510
Lee, Jang-Hee Seoul, KR 39 181
Lim, Dong-Chan Seoul, KR 31 178
Park, Hee-Sook Seoul, KR 72 380
Park, Jae-Hwa Gyeonggi-do, KR 47 141
Sohn, Woong-Hee Gyeonggi-do, KR 38 189
Yoo, Jong-Ryeol Gyeonggi-do, KR 40 267
Yun, Sun-Pil Seoul, KR 1 7

Cited Art Landscape

Patent Info (Count) # Cites Year
 
TESSERA ADVANCED TECHNOLOGIES, INC. (1)
* 6534375 METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS 7 2001
 
POLARIS INNOVATIONS LIMITED (1)
6207524 Memory cell with a stacked capacitor 12 1998
 
AMI SEMICONDUCTOR, INC. (1)
* 4540607 Selective LPCVD tungsten deposition by the silicon reduction method 40 1983
 
PS4 LUXCO S.A.R.L. (1)
* 6800543 Semiconductor device having a low-resistance gate electrode 12 2002
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
* 5837592 Method for stabilizing polysilicon resistors 36 1995
 
APPLIED MATERIALS, INC. (1)
2003/0123,216 Deposition of tungsten for the formation of conformal tungsten silicide 91 2001
 
WINBOND ELECTRONICS CORP. (1)
5891785 Process for forming self-aligned silicide 18 1997
 
HYNIX SEMICONDUCTOR INC. (1)
6340629 Method for forming gate electrodes of semiconductor device using a separated WN layer 23 1999
 
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (1)
6277719 Method for fabricating a low resistance Poly-Si/metal gate 15 1999
 
PROMOS TECHNOLOGIES INC. (1)
6133149 Method of improving thermal stability of tungsten silicide 6 1998
 
AIXTRON, INC. (1)
2003/0190,424 Process for tungsten silicide atomic layer deposition 3 2001
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (2)
* 2012/0139,014 STRUCTURE AND METHOD FOR LOW TEMPERATURE GATE STACK FOR ADVANCED SUBSTRATES 0 2010
* 2014/0332,874 SEMICONDUCTOR DEVICES 0 2014
 
APPLIED MATERIALS, INC. (6)
* 7947561 Methods for oxidation of a semiconductor device 2 2009
* 2009/0233,453 METHODS FOR OXIDATION OF A SEMICONDUCTOR DEVICE 9 2009
8207044 Methods for oxidation of a semiconductor device 3 2011
* 2011/0217,850 METHODS FOR OXIDATION OF A SEMICONDUCTOR DEVICE 1 2011
8993458 Methods and apparatus for selective oxidation of a substrate 0 2013
9514968 Methods and apparatus for selective oxidation of a substrate 0 2015
 
SK HYNIX INC. (2)
* 9159779 Method of fabricating semiconductor device 0 2012
* 2014/0004,679 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 1 2012
* Cited By Examiner

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