Method to tighten set distribution for PCRAM
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United States of America Patent
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May 19, 2009
Grant Date -
Jul 31, 2008
app pub date -
Oct 16, 2007
filing date -
Jan 31, 2007
priority date (Note) -
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Abstract
A memory device including a memory cell comprising phase change material is described along with methods for programming the memory device. A method for programming disclosed herein includes applying an increasing first voltage across the memory cell and monitoring current in the memory cell to detect a beginning of a phase transition of the phase change material. Upon detection of the beginning of a phase transition of the phase change material, the method includes applying a second voltage across the memory cell that is a function of the level of the first voltage upon detection of the beginning of a phase transition of the phase change material.
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