Adjusting resistance of non-volatile memory using dummy memory cells
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United States of America Patent
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May 19, 2009
Grant Date -
Nov 6, 2008
app pub date -
Mar 21, 2007
filing date -
Mar 21, 2007
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Abstract
In some non-volatile storage systems, a block of data memory cells is manufactured with a dummy word line at the bottom of the block, at the top of the block, and/or at other locations. By selectively programming memory cells on the dummy word line(s), the resistances associated with the data memory cells can be changed to account for different programmed data patterns.
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