Phase change memory cell having a sidewall contact
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United States of America Patent
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Jun 2, 2009
Grant Date -
May 22, 2008
app pub date -
Nov 17, 2006
filing date -
Nov 17, 2006
priority date (Note) -
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Abstract
A memory cell includes a first electrode and a second electrode forming an opening. The opening is defined by a first sidewall, a second sidewall, and a surface extending between the first sidewall and the second sidewall. The memory cell includes phase change material contacting the first electrode and the first sidewall and the second sidewall. The memory cell includes isolation material electrically isolating the phase change material from the surface extending between the first sidewall and the second sidewall.
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