Pattern reversal employing thick residual layers

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United States of America Patent

PATENT NO 7547504
APP PUB NO 20060063112A1
SERIAL NO

10946566

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Abstract

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The present invention features a method of patterning a substrate that includes forming, on the substrate, a first layer having a first pattern and selectively shifting in tone, as well as along a first direction, a subsequent pattern formed into the same layer that corresponds to the first pattern. To that end, one method of the present invention includes generating into the first layer, a second pattern having a shape inverse to the first pattern. A third pattern is then transferred into the first layer that has a shape inverse to the second pattern.

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Patent Owner(s)

Patent OwnerAddress
CITIBANK N A390 GREENWICH STREET NEW YORK NY 10013

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sreenivasan, Sidlgata V Austin, US 214 5594

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