Method for hafnium nitride deposition
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United States of America Patent
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Jun 16, 2009
Issued Date -
N/A
app pub date -
May 30, 2006
filing date -
Apr 4, 2003
priority date (Note) -
Expired
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Abstract
The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.
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