Semiconductor device and fabrication method thereof
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United States of America Patent
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Jun 23, 2009
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N/A
app pub date -
Apr 4, 2006
filing date -
Aug 19, 1994
priority date (Note) -
Expired
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Abstract
is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristics which are similar to those which employ monocrystals. Further, by connecting in parallel a plurality of such thin-film transistors it is possible to obtain characteristics which are effectively equivalent to those of a monocrystalline thin-film transistor in which the channel width has been increased.
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