Vertical double-diffusion metal-oxide-semiconductor transistor device
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United States of America Patent
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Jun 23, 2009
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app pub date -
Apr 15, 2008
filing date -
Apr 15, 2008
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Abstract
A vertical double-diffusion metal-oxide-semiconductor (VDMOS) transistor device includes a first conductive type semiconductor substrate, a gate structure formed in a first trench in the first conductive type semiconductor substrate, a first conductive type well surrounding the gate structure, a source region adjacent to the gate structure formed in the first conductive type well, a drain region surrounding the source region, and a trench isolation structure formed in a second trench between the source region and the drain region.
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