Method of manufacture of a PCRAM memory cell
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United States of America Patent
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Jun 23, 2009
Grant Date -
Oct 19, 2006
app pub date -
May 9, 2006
filing date -
Aug 22, 2002
priority date (Note) -
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Abstract
The invention provides a method of forming a resistance variable memory element and the resulting element. The method includes forming an insulating layer having an opening therein; forming a metal containing layer recessed in the opening; forming a resistance variable material in the opening and over the metal containing layer; and processing the resistance variable material and metal containing layer to produce a resistance variable material containing a diffused metal within the opening.
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