Programmable resistive memory with diode structure

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United States of America Patent

PATENT NO 7551473
APP PUB NO 20090095948A1
SERIAL NO

11871813

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Abstract

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Programmable resistive memory cells are accessed by semiconductor diode structures. Manufacturing methods and integrated circuits for programmable resistive elements with such diode structures are also disclosed.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Breitwisch, Matthew J Yorktown Heights, US 104 2613
Lam, Chung Hon Peekskill, US 115 3758
Lung, Hsiang-Lan Elmsford, US 320 9851

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