Non-volatile memory with predictive programming
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United States of America Patent
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Jun 23, 2009
Grant Date -
Oct 16, 2008
app pub date -
Apr 10, 2007
filing date -
Apr 10, 2007
priority date (Note) -
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Abstract
In a nonvolatile memory having an array of memory cells, wherein the memory cells are individually programmable to one of a range of threshold voltage levels, there is provided a predictive programming mode in which a predetermined function predicts what programming voltage level needs to be applied in order to program a given memory cell to a given target threshold voltage level. In this way, no verify operation needs to be performed, thereby greatly improving the performance of the programming operation. In a preferred embodiment, the predetermined function is linear and is calibrated for each memory cell under programming by one or more checkpoints. A checkpoint is a set of coordinates on the predetermined function determined by a conventional programming mode employing alternating program and verify operations.
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