Process for manufacturing a gallium rich gallium nitride film
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United States of America Patent
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Jun 30, 2009
Grant Date -
Aug 10, 2006
app pub date -
May 19, 2003
filing date -
May 17, 2002
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Abstract
Torr, wherein the ratio of gallium atoms to nitrogen atoms in the gallium rich gallium nitride film is from 1.01 to 1.20. The invention also provides the option of annealing the gallium rich gallium nitride film at a temperature of from about 20° C. to about 650° C. and for a time sufficient to decrease the resistivity of the film so that it becomes electrically conductive, for instance to a resistivity below 100 ohm·cm.
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