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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
TOKYO ELECTRON LIMITED	TOKYO

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Hirose, Eiji	Yamanashi, JP	14	584
Iwabuchi, Noriyuki	Miyagi, JP	18	996
Suzuki, Shingo	Yamanashi, JP	218	2794
Yokouchi, Takeshi	Miyagi, JP	14	399

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
June 30, 2009	US,7553773,B2   US7553773B2	GRANTED PATENT AS SECOND PUBLICATION
August 11, 2005	US,20050176258,A1   US20050176258A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 7553773

Pressure control method and processing device

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