Method for making ohmic contact to silicon structures with low thermal loads
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United States of America Patent
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Jun 30, 2009
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N/A
app pub date -
May 3, 2005
filing date -
May 3, 2005
priority date (Note) -
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Abstract
An ohmic contact for a silicon slider body is disclosed. A scanned laser beam locally heats a metal film on the slider body to interdiffuse the metal and silicon while minimizing the total thermal load on the slider body. This localized heating avoids thermal damage to the sensitive magnetic head region on the slider. The native oxide layer on the slider is removed by a sputter etch, followed by deposition of a diffusion layer. A capping layer is then deposited to reduce oxidation during subsequent processing. The metal layer is then locally annealed by scanning the laser beam over the target area. Contact resistance of less than 100 ohms is achieved while minimizing the thermal load on the slider body.
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