Semiconductor device having a gap between a gate electrode and a dummy gate electrode
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United States of America Patent
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Jun 30, 2009
Grant Date -
Nov 24, 2005
app pub date -
Jul 25, 2005
filing date -
Jun 26, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
A method of deforming a pattern comprising the steps of: forming, over a substrate, a layered-structure with an upper surface including at least one selected region and at least a re-flow stopper groove, wherein the re-flow stopper groove extends outside the selected region and separate from the selected region; selectively forming at least one pattern on the selected region; and causing a re-flow of the pattern, wherein a part of an outwardly re-flowed pattern is flowed into the re-flow stopper groove, and then an outward re-flow of the pattern is restricted by the re-flow stopper groove extending outside of the pattern, thereby to form a deformed pattern with at least an outside edge part defined by an outside edge of the re-flow stopper groove.
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