Semiconductor device having thin film transistor

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United States of America Patent

PATENT NO 7557377
SERIAL NO

10926006

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Abstract

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is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristics which are similar to those which employ monocrystals. Further, by connecting in parallel a plurality of such thin-film transistors it is possible to obtain characteristics which are effectively equivalent to those of a monocrystalline thin-film transistor in which the channel width has been increased.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDJAPAN'S KANAGAWA PREFECTURE ATSUGI CITY ATSUGI-SHI KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Teramoto, Satoshi Atsugi , JP 312 11749
Yamazaki, Shunpei Setagaya-ku , JP 7534 239327

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