Flash memory device and method of erasing flash memory device

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United States of America Patent

PATENT NO 7558122
APP PUB NO 20080144387A1
SERIAL NO

11938922

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Abstract

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A flash memory device and a method of erasing memory cells in a flash memory device are provided. A first post program operation is performed on erased memory cells having a threshold voltage lower than a first program verify voltage. A second post program operation is performed on erased memory cells having a threshold voltage lower than a second program verify voltage. The second program verify voltage is lower than the first program verify voltage.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Dae-Han Gangdong-gu , KR 23 145
Lee, Jung-Woo Bucheon-si , KR 63 852

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