Void formation for semiconductor junction capacitance reduction
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United States of America Patent
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Jul 14, 2009
Grant Date -
Feb 7, 2008
app pub date -
Aug 7, 2006
filing date -
Aug 7, 2006
priority date (Note) -
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Abstract
Semiconductor structures having a decreased semiconductor junction capacitance of a semiconductor junction within an active semiconductor layer may be fabricated using an ion implantation and thermal annealing method. The ion implantation and thermal annealing method provides for a plurality of voids located completely within the active semiconductor layer proximate to the semiconductor junction located within the active semiconductor layer, absent stressing of the active semiconductor layer.
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