Programmable resistive RAM and manufacturing method

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United States of America Patent

PATENT NO 7560337
APP PUB NO 20070173019A1
SERIAL NO

11426213

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Abstract

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Programmable resistive RAM cells have a resistance that depends on the size of the contacts. Manufacturing methods and integrated circuits for lowered contact resistance are disclosed that have contacts of reduced size.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ho, ChiaHua Kaohsiung , TW 74 3941
Hsieh, Kuang Yeu Hsinchu , TW 65 3244
Lai, Erh-Kun Taichung County , TW 259 6334

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