Device structures including ruthenium silicide diffusion barrier layers

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United States of America Patent

PATENT NO 7560815
SERIAL NO

09603132

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Abstract

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, where x is in the range of about 0.01 to about 10. Capacitor electrodes, interconnects or other structures may be formed with such a diffusion barrier layer.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Marsh, Eugene P Boise , US 225 5794
Vaartstra, Brian A Nampa , US 158 9781

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