Film bulk acoustic resonator (FBAR) devices with temperature compensation
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United States of America Patent
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Jul 14, 2009
Grant Date -
May 31, 2007
app pub date -
Nov 30, 2005
filing date -
Nov 30, 2005
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Abstract
The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack that comprises an FBAR characterized by a resonant frequency having a temperature coefficient and a temperature-compensating layer comprising doped silicon dioxide. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency of the FBAR depends at least in part.
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