Memory cell sidewall contacting side electrode

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7569844
APP PUB NO 20080258126A1
SERIAL NO

11736384

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A memory cell includes a memory cell layer over a memory cell access layer. The memory cell access layer comprises a bottom electrode. The memory cell layer comprises a dielectric layer and a side electrode at least partially defining a void with a memory element therein. The memory element comprises a memory material switchable between electrical property states by the application of energy. The memory element is in electrical contact with the side electrode and with the bottom electrode. In some examples the memory element has a pillar shape with a generally constant lateral dimension with the side electrode and the dielectric layer surrounding and in contact with first and second portions of the memory element.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • MACRONIX INTERNATIONAL CO., LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang-Lan Elmsford , US 307 9509

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation