Source/drain stressor and method therefor
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United States of America Patent
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Aug 11, 2009
Grant Date -
Aug 28, 2008
app pub date -
Feb 28, 2007
filing date -
Feb 28, 2007
priority date (Note) -
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Abstract
A method for forming a semiconductor device is provided. The method includes forming a gate structure overlying a substrate. The method further includes forming a sidewall spacer adjacent to the gate structure. The method further includes performing an angled implant in a direction of a source side of the semiconductor device. The method further includes annealing the semiconductor device. The method further includes forming recesses adjacent opposite ends of the sidewall spacer in the substrate to expose a first type of semiconductor material. The method further includes epitaxially growing a second type of semiconductor material in the recesses, wherein the second type of semiconductor material has a lattice constant different from a lattice constant of the first type of semiconductor material to create stress in a channel region of the semiconductor device.
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