Semiconductor device and manufacturing method thereof

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Aug 11, 2009
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Jan 12, 2006
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Apr 30, 1999

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Abstract

forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFF of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.

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Patent Owner	Address
SEMICONDUCTOR ENERGY LABORATORY CO LTD	398 HASE ATSUGI-SHI KANAGAWA-KEN 243-0036

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Yamazaki, Shunpei	Setagaya, JP	7285	226486

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Semiconductor device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

11330152

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US Family Size	Non-US Coverage
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DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
August 11, 2009	US,7573069,B2 US7573069B2	GRANTED PATENT AS SECOND PUBLICATION
June 08, 2006	US,20060121736,A1 US20060121736A1	FIRST PUBLISHED PATENT APPLICATION

PATENT NO	7573069
SERIAL NO	11330152
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11330152

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