Low voltage semiconductor memory device

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United States of America Patent

PATENT NO 7573768
APP PUB NO 20060133131A1
SERIAL NO

11126744

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Abstract

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A semiconductor memory device having a cell array area for reading or storing data, including: a normal cell block including a plurality of normal cells, each being coupled to one of a bit line and a bit line bar for storing a data; and a reference cell block including a plurality of reference cell units, each including a reference capacitor, a first reference transistor for connecting a first terminal of the reference capacitor to the bit line, a second reference transistor for connecting the first terminal of the reference capacitor to the bit line bar, and a third reference transistor connected to a reference voltage for supplying the reference voltage to the first terminal of the reference capacitor.

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Patent Owner(s)

Patent OwnerAddress
HYNIX SEMICONDUCTOR INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Jin-Hong Ichon-shi, KR 59 886
Kang, Hee-Bok Ichon-shi, KR 46 673

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