Making capacitor structure in a semiconductor device
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United States of America Patent
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Aug 25, 2009
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N/A
app pub date -
Jun 23, 2006
filing date -
Jun 16, 2004
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Abstract
A method of making capacitor structure includes arranging first-layer conducting strips on a first layer of an integrated circuit chip, and arranging second-layer conducting strips on a second layer of the integrated circuit chip. The first-layer conducting strips and the second-layer conducting strips can be arranged as respective piecewise spirals. The second-layer conducting strips are arranged overlying and electrically separated from the first-layer conducting strips, and the method further includes electrically connecting the first-layer conducting strips with the second-layer conducting strips.
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