Access transistor for memory device
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United States of America Patent
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Aug 25, 2009
Grant Date -
Feb 15, 2007
app pub date -
Aug 9, 2005
filing date -
Aug 9, 2005
priority date (Note) -
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Abstract
An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance variable memory element.
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